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1. product profile 1.1 general description the BGU7061 is a fully integrated analog-controlled variable gain amplifier module. its low noise and high linearity performance makes it ideal for sensitive receivers in cellular base station applications. the BGU7061 is operating in the 800 mhz to 915 mhz frequency range and has a gain control range of more than 35 db. at maximum gain the noise figure is 0.74 db. the gain is analog-controlled having maximum gain at 0 v and minimum gain at 3.3 v. the lna can be bypassed extending the dynamic range. the BGU7061 is internally matched to 50 ohm, meaning no external matching is required, enabling ease of use. it is housed in a 16 pins 8 mm ? 8 mm ? 1.3 mm leadless hlqfn16r package sot1301. 1.2 features and benefits ? input and output internally matched to 50 ? ? low noise figure of 0.74 db ? high input ip3 of 2 dbm ? high p i(1db) of ? 12.5 dbm ? bypass mode of lna giving high dynamic gain range ? gain control range of 0 db to 35 db ? single 5 v supply ? single analog gain control of 0 v to 3.3 v ? unconditionally stable up to 12.75 ghz ? moisture sensitivity level 3 ? esd protection at all pins 1.3 applications ? cellular base stations, remote radio heads ? 3g, lte infrastructure ? low noise applications with variable gain and high linearity requirements ? active antenna BGU7061 analog high linearity low noi se variable gain amplifier rev. 1 ? 21 january 2014 product data sheet + / 4 ) 1 5
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 2 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 1.4 quick reference data [1] high gain mode: gs1 = low; gs2 = high (see table 13 ) [2] low gain mode: gs1 = high; gs2 = low (see ta b l e 1 3 ) table 1. quick reference data gs1 = low; gs2 = high (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit f = 900 mhz i cc(tot) total supply current high gain mode [1] 197 229 267 ma low gain mode [2] 175 199 230 ma nf noise figure v ctrl(gp) = 0 v (maximum power gain) [1] -0.74-db g p = 35 db [1] - 0.87 1.05 db ip3 i input third-order intercept point g p = 35 db; 2-tone; tone-spacing = 1.0 mhz [1] 12.0- dbm p i(1db) input power at 1 db gain compression g p = 35 db [1] ? 13.5 ? 12.5 - dbm f = 830 mhz i cc(tot) total supply current high gain mode [1] 197 229 267 ma low gain mode [2] 175 199 230 ma nf noise figure v ctrl(gp) = 0 v (maximum power gain) [1] -0.61-db g p = 35 db [1] - 0.75 1.05 db ip3 i input third-order intercept point g p = 35 db; 2-tone; tone-spacing = 1.0 mhz [1] 12.7- dbm p i(1db) input power at 1 db gain compression g p = 35 db [1] ? 13.5 ? 12.4 - dbm f = 850 mhz i cc(tot) total supply current high gain mode [1] 197 229 267 ma low gain mode [2] -200-ma nf noise figure v ctrl(gp) = 0 v (maximum power gain) [1] -0.64-db g p = 35 db [1] - 0.77 1.05 db ip3 i input third-order intercept point g p = 35 db; 2-tone; tone-spacing = 1.0 mhz [1] 12.9- dbm p i(1db) input power at 1 db gain compression g p = 35 db [1] ? 13.5 ? 12.4 - dbm
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 3 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 2. pinning information 2.1 pinning 2.2 pin description 3. ordering information fig 1. pin configuration 5)b,1 *1' 9 fwuo*s qf ddd 7udqvsduhqwwrsylhz whuplqdo lqgh[duhd *6 qf lf qf *1' 5)b287 *1' *6 qf 9 && 9 && *1' table 2. pin description symbol pin description rf_in 1 rf input gnd 2, 11, 13, 16 ground gs1 3 gain switch control 1 n.c. 4, 5, 7, 10 not connected, internally open gs2 6 gain switch control 2 i.c. 8 internally connected to ground v ctrl(gp) 9 power gain control voltage rf_out 12 rf output v cc2 14 supply voltage 2 v cc1 15 supply voltage 1 table 3. ordering information type number package name description version BGU7061 hlqfn16r plastic thermal enhanced low quad flat package; no leads; 16 terminals; body 8 ? 8 ? 1.3 mm sot1301-1
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 4 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 4. functional diagram fig 2. functional diagram 5)b,1 *1' 9 fwuo*s qf ddd whuplqdo lqgh[duhd * 6 qf lf qf *1' 5)b2 87 *1' *6 qf 9 && 9 && *1' %<3$663$7+ /1$ 9*$
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 5 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 5. limiting values [1] high gain mode: gs1 = low; gs2 = high (see table 13 ) [2] low gain mode: gs1 = high; gs2 = low (see ta b l e 1 3 ) 6. recommended operating conditions 7. thermal characteristics [1] the case temperature is measured at the ground solder pad. table 4. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage 06 v v ctrl(gp) power gain control voltage ? 1+3.6v v i(gs1) input voltage on pin gs1 ? 1+3.6v v i(gs2) input voltage on pin gs2 ? 1+3.6v p i(rf)cw continuous waveform rf input power high gain mode; v ctrl(gp) = 0 v [1] -10dbm low gain mode; v ctrl(gp) = 0 v [2] -15dbm t j junction temperature -150 ?c t stg storage temperature ? 40 +150 ?c v esd electrostatic discharge voltage human body model (hbm); according to ansi/esda-jedec js-001 -2020-device testing, human body model - ? 2kv charged device model (cdm); according to jedec standard 22-c101 - ? 750 v table 5. recommended operating conditions symbol parameter conditions min typ max unit v cc1 supply voltage 1 4.75 5 5.25 v v cc2 supply voltage 2 4.75 5 5.25 v v ctrl(gp) power gain control voltage 0 - 3.3 v v i(gs1) input voltage on pin gs1 0 - 3.3 v v i(gs2) input voltage on pin gs2 0 - 3.3 v z 0 characteristic impedance - 50 - ? t case case temperature ? 40 - +85 ? c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case [1] 42 k/w
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 6 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 8. characteristics 8.1 characteristics at f = 900 mhz table 7. characteristics high gain mode gs1 = low; gs2 = high (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; f = 900 mhz; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit i cc(tot) total supply current 197 229 267 ma g p(min) minimum power gain v ctrl(gp) = 3.3 v - 12.7 - db g p(max) maximum power gain v ctrl(gp) = 0 v - 36.7 - db g p(flat) power gain flatness 880 mhz ? f ? 915 mhz; 18 db ? g p ? 35 db - 0.0 - db nf noise figure v ctrl(gp) = 0 v (maximum power gain) - 0.74 - db g p = 35 db - 0.87 1.05 db g p = 18 db - 6.47 - db ip3 i input third-order intercept point 2-tone; tone-spacing = 1.0 mhz g p = 35 db 1 2.0 - dbm g p = 30 db - 4.8 - dbm g p = 29 db - 5.0 - dbm g p = 18 db - 6.3 - dbm p i(1db) input power at 1 db gain compression g p = 35 db ? 13.5 ? 12.5 - dbm g p = 30 db - ? 7.6 - dbm g p = 29 db - ? 6.8 - dbm g p = 18 db - ? 4.8 - dbm rl in input return loss v ctrl(gp) = 0 v (maximum power gain) - 30.5 - db g p = 35 db - 28.0 - db rl out output return loss v ctrl(gp) = 0 v (maximum power gain) - 17.5 - db k rollett stability factor 0 ghz ? f ? 12.75 ghz 1 - - table 8. characteristics low gain mode gs1 = high; gs2 = low (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; f = 900 mhz; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit i cc(tot) total supply current 175 199 230 ma g p(min) minimum power gain v ctrl(gp) = 3.3 v - ? 5.9 - db g p(max) maximum power gain v ctrl(gp) = 0 v - 18.3 - db g p(flat) power gain flatness 880 mhz ? f ? 915 mhz; 3 db ? g p ? 17 db - 0.0 - db nf noise figure g p = 17 db - 11.2 - db g p = 3 db - 22.9 - db ip3 i input third-order intercept point 2-tone; tone-spacing = 1.0 mhz - g p = 17 db - 21.4 - dbm g p = 12 db - 26.5 - dbm g p = 11 db - 27.4 - dbm g p = 3 db - 31.2 - dbm
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 7 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 8.2 characteristics at f = 830 mhz p i(1db) input power at 1 db gain compression g p = 17 db - 5.6 - dbm g p = 12 db - 10.4 - dbm g p = 11 db - 11.1 - dbm g p = 3 db - 13.2 - dbm rl in input return loss v ctrl(gp) = 0 v (maximum power gain) - 25.1 - db g p = 17 db - 22.7 - db rl out output return loss v ctrl(gp) = 0 v (maximum power gain) - 18.3 - db k rollett stability factor 0 ghz ? f ? 12.75 ghz 1 - - table 8. characteristics low gain mode ?continued gs1 = high; gs2 = low (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; f = 900 mhz; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit table 9. characteristics high gain mode gs1 = low; gs2 = high (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; f = 830 mhz; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit i cc(tot) total supply current 197 229 267 ma g p(min) minimum power gain v ctrl(gp) = 3.3 v - 12.7 - db g p(max) maximum power gain v ctrl(gp) = 0 v - 36.8 - db g p(flat) power gain flatness 815 mhz ? f ? 840 mhz; 18 db ? g p ? 35 db - 0.1 - db nf noise figure v ctrl(gp) = 0 v (maximum power gain) - 0.61 - db g p = 35 db - 0.75 1.05 db g p = 18 db - 5.49 - db ip3 i input third-order intercept point 2-tone; tone-spacing = 1.0 mhz g p = 35 db 1 2.7 - dbm g p = 30 db - 4.8 - dbm g p = 29 db - 5.1 - dbm g p = 18 db - 6.4 - dbm p i(1db) input power at 1 db gain compression g p = 35 db ? 13.5 ? 12.4 - dbm g p = 30 db - ? 7.6 - dbm g p = 29 db - ? 6.9 - dbm g p = 18 db - ? 4.8 - dbm rl in input return loss v ctrl(gp) = 0 v (maximum power gain) - 24.0 - db g p = 35 db - 24.8 - db rl out output return loss v ctrl(gp) = 0 v (maximum power gain) - 18.0 - db k rollett stability factor 0 ghz ? f ? 12.75 ghz 1 - -
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 8 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 8.3 characteristics at f = 850 mhz table 10. characteristics low gain mode gs1 = high; gs2 = low (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; f = 830 mhz; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit i cc(tot) total supply current 175 199 230 ma g p(min) minimum power gain v ctrl(gp) = 3.3 v - ? 6.1 - db g p(max) maximum power gain v ctrl(gp) = 0 v - 18.4 - db g p(flat) power gain flatness 815 mhz ? f ? 840 mhz; 3 db ? g p ? 17 db - 0.0 - db nf noise figure g p = 17 db - 10.4 - db g p = 3 db - 22.0 - db ip3 i input third-order intercept point 2-tone; tone-spacing = 1.0 mhz - g p = 17 db - 21.7 - dbm g p = 12 db - 26.9 - dbm g p = 11 db - 27.7 - dbm g p = 3 db - 31.4 - dbm p i(1db) input power at 1 db gain compression g p = 17 db - 5.8 - dbm g p = 12 db - 10.5 - dbm g p = 11 db - 11.9 - dbm g p = 3 db - 13.6 - dbm rl in input return loss v ctrl(gp) = 0 v (maximum power gain) - 25.5 - db g p = 17 db - 24.0 - db rl out output return loss v ctrl(gp) = 0 v (maximum power gain) - 19.4 - db k rollett stability factor 0 ghz ? f ? 12.75 ghz 1 - - table 11. characteristics high gain mode gs1 = low; gs2 = high (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; f = 850 mhz; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit i cc(tot) total supply current 197 229 267 ma g p(min) minimum power gain v ctrl(gp) = 3.3 v - 12.7 - db g p(max) maximum power gain v ctrl(gp) = 0 v - 36.7 - db g p(flat) power gain flatness 825 mhz ? f ? 865 mhz; 18 db ? g p ? 35 db - 0.1 - db nf noise figure v ctrl(gp) = 0 v (maximum power gain) - 0.64 - db g p = 35 db - 0.77 1.05 db g p = 18 db - 5.54 - db ip3 i input third-order intercept point 2-tone; tone-spacing = 1.0 mhz g p = 35 db 1 2.9 - dbm g p = 30 db - 4.8 - dbm g p = 29 db - 5.0 - dbm g p = 18 db - 6.4 - dbm
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 9 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 8.4 gain switch truth table p i(1db) input power at 1 db gain compression g p = 35 db ? 13.5 ? 12.4 - dbm g p = 30 db - ? 7.6 - dbm g p = 29 db - ? 6.9 - dbm g p = 18 db - ? 5.1 - dbm rl in input return loss v ctrl(gp) = 0 v (maximum power gain) - 25.1 - db g p = 35 db - 26.5 - db rl out output return loss v ctrl(gp) = 0 v (maximum power gain) - 17.5 - db k rollett stability factor 0 ghz ? f ? 12.75 ghz 1 - - table 11. characteristics high gain mode ?continued gs1 = low; gs2 = high (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; f = 850 mhz; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit table 12. characteristics low gain mode gs1 = high; gs2 = low (see table 13 ); v cc1 = 5 v; v cc2 = 5 v; f = 850 mhz; t amb =25 ? c; input and output 50 ? ; unless otherwise specified. all rf parameters have been charac terized at the device rf input and rf output terminals. symbol parameter conditions min typ max unit i cc(tot) total supply current - 200 - ma g p(min) minimum power gain v ctrl(gp) = 3.3 v - ? 6.0 - db g p(max) maximum power gain v ctrl(gp) = 0 v - 18.3 - db g p(flat) power gain flatness 825 mhz ? f ? 865 mhz; 3 db ? g p ? 17 db - 0.0 - db nf noise figure g p = 17 db - 10.4 - db g p = 3 db - 22.1 - db ip3 i input third-order intercept point 2-tone; tone-spacing = 1.0 mhz - g p = 17 db - 21.6 - dbm g p = 12 db - 26.5 - dbm g p = 11 db - 27.5 - dbm g p = 3 db - 31.4 - dbm p i(1db) input power at 1 db gain compression g p = 17 db - 5.7 - dbm g p = 12 db - 10.5 - dbm g p = 11 db - 11.2 - dbm g p = 3 db - 13.5 - dbm rl in input return loss v ctrl(gp) = 0 v (maximum power gain) - 25.1 - db g p = 17 db - 23.5 - db rl out output return loss v ctrl(gp) = 0 v (maximum power gain) - 18.7 - db k rollett stability factor 0 ghz ? f ? 12.75 ghz 1 - - table 13. gain switch truth table v cc1 = 5 v; v cc2 = 5 v; t amb =25 ? c gain mode gs1 gs2 logic v gs1 logic v gs2 high gain mode low 0 v to 0.5 v high 2 v to 3.3 v low gain mode high 2 v to 3.3 v low 0 v to 0.5 v
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 10 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 8.5 graphs gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; v ctrl(gp) =0v. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; v ctrl(gp) =0v. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 3. power gain as a function of frequency in high gain mode; typical values fig 4. power gain as a function of frequency in low gain mode; typical values gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; v ctrl(gp) =0v. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; v ctrl(gp) =0v. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 5. input return loss as a function of frequency in high gain mode; typical values fig 6. input return loss as a function of frequency in low gain mode; typical values ddd i*+] * s * s g% g% g% ddd i*+] * s * s g% g% g% ddd i*+] 5/ 5/ lq lq 5/ lq g% g% g% ddd i*+] 5/ 5/ lq lq 5/ lq g% g% g%
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 11 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; v ctrl(gp) =0v; t amb = 25 ? c. gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; v ctrl(gp) =0v; t amb = 25 ? c. fig 7. s-parameters as a function of frequency in high gain mode; typical values fig 8. s-parameters as a function of frequency in low gain mode; typical values gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; v ctrl(gp) =0v. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; v ctrl(gp) =0v. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 9. rollet stability factor as a function of frequency in high gain mode; typical values fig 10. rollet stability factor as a function of frequency in low gain mode; typical values ddd i*+] vsduv vsduv vsduv g% g% g% 6 6 6 6 6 6 ddd i*+] vsduv vsduv vsduv g% g% g% 6 6 6 6 6 6 ddd i*+] . . ddd i*+] . .
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 12 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 900 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 900 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 11. input third-order intercept point as a function of power gain in high gain mode; typical values fig 12. input third-order inte rcept point as a function of power gain in low gain mode; typical values gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 830 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 830 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 13. input third-order intercept point as a function of power gain in high gain mode; typical values fig 14. input third-order inte rcept point as a function of power gain in low gain mode; typical values ddd * s g% ,3 ,3 , ,3 , g%p g%p g%p ddd * s g% ,3 ,3 , ,3 , g%p g%p g%p ddd * s g% ,3 ,3 , ,3 , g%p g%p g%p ddd * s g% ,3 ,3 , ,3 , g%p g%p g%p
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 13 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 850 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 850 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 15. input third-order intercept point as a function of power gain in high gain mode; typical values fig 16. input third-order inte rcept point as a function of power gain in low gain mode; typical values gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 900 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 900 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 17. input power at 1 db gain compression as a function of power gain in high gain mode; typical values fig 18. input power at 1 db gain compression as a function of power gain in low gain mode; typical values ddd * s g% ,3 ,3 , ,3 , g%p g%p g%p ddd * s g% ,3 ,3 , ,3 , g%p g%p g%p ddd * s g% 3 lg% lg% 3 lg% g%p g%p g%p ddd * s g% 3 lg% lg% 3 lg% g%p g%p g%p
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 14 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 830 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 830 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 19. input power at 1 db gain compression as a function of power gain in high gain mode; typical values fig 20. input power at 1 db gain compression as a function of power gain in low gain mode; typical values gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 850 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 850 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 21. input power at 1 db gain compression as a function of power gain in high gain mode; typical values fig 22. input power at 1 db gain compression as a function of power gain in low gain mode; typical values ddd * s g% 3 lg% lg% 3 lg% g%p g%p g%p ddd * s g% 3 lg% lg% 3 lg% g%p g%p g%p ddd * s g% 3 lg% lg% 3 lg% g%p g%p g%p ddd * s g% 3 lg% lg% 3 lg% g%p g%p g%p
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 15 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 900 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 900 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 23. noise figure as a function of power gain in high gain mode; typical values fig 24. noise figure as a function of power gain in low gain mode; typical values gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 830 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 830 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 25. noise figure as a function of power gain in high gain mode; typical values fig 26. noise figure as a function of power gain in low gain mode; typical values ddd * s g% 1) 1) 1) g% g% g% ddd * s g% 1) 1) 1) g% g% g% ddd * s g% 1) 1) 1) g% g% g% ddd * s g% 1) 1) 1) g% g% g%
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 16 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 850 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 850 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 27. noise figure as a function of power gain in high gain mode; typical values fig 28. noise figure as a function of power gain in low gain mode; typical values gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 900 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 900 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 29. power gain as a function of power gain control voltage in high gain mode; typical values fig 30. power gain as a function of power gain control voltage in low gain mode; typical values ddd * s g% 1) 1) 1) g% g% g% ddd * s g% 1) 1) 1) g% g% g% ddd 9 fwuo*s 9 * s * s g% g% g% ddd 9 fwuo*s 9 * s * s g% g% g%
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 17 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 830 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 830 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 31. power gain as a function of power gain control voltage in high gain mode; typical values fig 32. power gain as a function of power gain control voltage in low gain mode; typical values gs1 = low; gs2 = high; v cc1 =5v; v cc2 =5v; f = 850 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c gs1 = high; gs2 = low; v cc1 =5v; v cc2 =5v; f = 850 mhz. (1) t amb = ?40 ? c (2) t amb =+25 ? c (3) t amb =+85 ? c fig 33. power gain as a function of power gain control voltage in high gain mode; typical values fig 34. power gain as a function of power gain control voltage in low gain mode; typical values ddd 9 fwuo*s 9 * s * s g% g% g% ddd 9 fwuo*s 9 * s * s g% g% g% ddd 9 fwuo*s 9 * s * s g% g% g% ddd 9 fwuo*s 9 * s * s g% g% g%
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 18 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 9. application information [1] murata grm1555 series. [2] murata lqg15 series. table 14. list of components for application circuit see figure 35 . component description value remarks c1, c2 capacitor 1 nf [1] 0402 c3, c4, c5, c6, c12 capacitor 100 pf [1] 0402 c7, c8, c9, c10, capacitor optional c11, c17 capacitor 100 nf [1] 0402 c13, c14, c15, c16 capacitor optional l1, l2 inductor 10 nh [2] 0402
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 19 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier see table 14 for a list of components. fig 35. schematic layout for application circuit 5)b,1 5)b,1387 & & & & & & & & & & & & & & & *1' / / 9 fwuo*s qf ddd *6 qf lf qf *1' 5)b287 *1' *6 *dlqb6zlwfkbfrqwuro *dlqbfwuo *dlqb6zlwfkbfrqwuro qf 9 && 9 && 9 && 9 && *1' %<3$663$7+ /1$ 9*$ & 5)b287387 &
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 20 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 10. package outline fig 36. package outline sot1301-1 (hlqfn16r) 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627 vrwbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv +/4)15sodvwlfwkhupdohqkdqfhgorzsurilohtxdgiodwsdfndjhqrohdgvwhuplqdoverg\[[pp 627 e' ' k (( k hh h // yz \\ pp vfdoh whuplqdo lqgh[duhd whuplqdo lqgh[duhd h h h ; ( h h h ( k / / $ e & \ & \ % ' $ ' k $& % ?y & ?z ghwdlo;
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 21 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 11. abbreviations 12. revision history table 15. abbreviations acronym description 3g 3rd generation esd electrostatic discharge lna low noise amplifier lte long term evolution table 16. revision history document id release date data sheet status change notice supersedes BGU7061 v.1 20140121 product data sheet - -
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 22 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BGU7061 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 21 january 2014 23 of 24 nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BGU7061 analog high linearity low no ise variable gain amplifier ? nxp b.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 21 january 2014 document identifier: BGU7061 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 2.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 functional diagram . . . . . . . . . . . . . . . . . . . . . . 4 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 6 recommended operating conditions. . . . . . . . 5 7 thermal characteristics . . . . . . . . . . . . . . . . . . 5 8 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 characteristics at f = 900 mhz . . . . . . . . . . . . . 6 8.2 characteristics at f = 830 mhz . . . . . . . . . . . . . 7 8.3 characteristics at f = 850 mhz . . . . . . . . . . . . . 8 8.4 gain switch truth table . . . . . . . . . . . . . . . . . . . 9 8.5 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 application information. . . . . . . . . . . . . . . . . . 18 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 20 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 21 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 21 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 22 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 22 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23 14 contact information. . . . . . . . . . . . . . . . . . . . . 23 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

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